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Microwave plasma Asher

product description: It is suitable for the removal of various photoresists in the front and rear sections of semiconductors.
Fabric:
model: MS-200
application:
TEL: 400-660-7690 turn 1

product description:

Introduction: The single-chamber Asher independently developed by Andong, adopts an automatic three-axis high-precision robotic arm, microwave plasma generator, and single-wafer reaction chamber design, based on the Windows platform with a user-friendly interface, and the system architecture is reasonable. The equipment has the advantages of a small footprint, high productivity, low cost of consumables, and low operating costs. It is suitable for the removal of various photoresists in the front and rear sections of semiconductors.


Advantages:

•Suitable for 4'' 6'' and 8'' wafers (silicon-based and compound semiconductors)

•Adaptive robotic arm, pick and place accuracy 0.05mm

•Highly sealed cavity design, vacuum bottom pressure 30mT

•Microwave + quartz gas path design, degumming uniformity 5~7%

•Increasing FFU effectively reduces particle pollution



Functional configurationTechnical parameter

Equipment Availability / Uptime

≥95%

Mean Time To Repair (MTTR)

≤4hours

Mean Time Between Failures (MTBF)

≥250hours

Mean Time Between Assists (MTBA)

≥24hours

Mean Wafers Between Breakage (MWBB)

≤1 in 10,000 wafers

Main Chamber Base Pressure

≤30 mtorr

Main Chamber Leak Rate

≤10 mtorr/min

Heater Temperature Control

±3℃ of setpoint

Microwave Power Range

300W to 1500W

Microwave Power Control

±3% of setpoint
WPH>25 (4um photoresist)
Substrate loss<10A


PR STRIP

Photoresist Strip Rate

>40000 A/min

Photoresist Strip Rate Un

Within wafer

Spc<7%            

Wafer to wafer

Spc<7%            

Lot to lot

Spc<7%            

Polymer removal

Substrate Loss

<10A

Particle

<30ea (0.3u)

DESCUM

Strip Rate

1000-3000 A/min

Strip Rate Un

Within wafer

Spc<7%            

Wafer to wafer

Spc<7%            

Lot to lot

Spc<7%            

Polymer removal

Substrate Loss

<5A

Particle

<30ea (0.3u)


Carbon Film Removal

Strip Rate

200-800 A/min

Strip Rate Un

Within wafer

Spc<7%            

Wafer to wafer

Spc<7%            

Lot to lot

Spc<7%            

Polymer removal

Substrate Loss

<5A

Particle

<30ea (0.3u)


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