Introduction: The single-chamber Asher independently developed by Andong, adopts an automatic three-axis high-precision robotic arm, microwave plasma generator, and single-wafer reaction chamber design, based on the Windows platform with a user-friendly interface, and the system architecture is reasonable. The equipment has the advantages of a small footprint, high productivity, low cost of consumables, and low operating costs. It is suitable for the removal of various photoresists in the front and rear sections of semiconductors.
Advantages:
•Suitable for 4'' 6'' and 8'' wafers (silicon-based and compound semiconductors)
•Adaptive robotic arm, pick and place accuracy 0.05mm
•Highly sealed cavity design, vacuum bottom pressure 30mT
•Microwave + quartz gas path design, degumming uniformity 5~7%
•Increasing FFU effectively reduces particle pollution
| Functional configuration | Technical parameter | 
Equipment Availability / Uptime  | ≥95% | 
Mean Time To Repair (MTTR)  | ≤4hours | 
Mean Time Between Failures (MTBF)  | ≥250hours | 
Mean Time Between Assists (MTBA)  | ≥24hours | 
Mean Wafers Between Breakage (MWBB)  | ≤1 in 10,000 wafers | 
Main Chamber Base Pressure  | ≤30 mtorr | 
Main Chamber Leak Rate  | ≤10 mtorr/min | 
Heater Temperature Control  | ±3℃ of setpoint | 
Microwave Power Range  | 300W to 1500W | 
Microwave Power Control  | ±3% of setpoint | 
| WPH | >25 (4um photoresist) | 
| Substrate loss | <10A | 
PR STRIP  | ||
Photoresist Strip Rate  | >40000 A/min | |
Photoresist Strip Rate Un  | Within wafer  | Spc<7% | 
Wafer to wafer  | Spc<7% | |
Lot to lot  | Spc<7% | |
Polymer removal  | Substrate Loss  | <10A | 
Particle  | <30ea (0.3u) | |
DESCUM  | ||
Strip Rate  | 1000-3000 A/min | |
Strip Rate Un  | Within wafer  | Spc<7% | 
Wafer to wafer  | Spc<7% | |
Lot to lot  | Spc<7% | |
Polymer removal  | Substrate Loss  | <5A | 
Particle  | <30ea (0.3u) | |
| Carbon Film Removal | ||
Strip Rate  | 200-800 A/min | |
Strip Rate Un  | Within wafer  | Spc<7% | 
Wafer to wafer  | Spc<7% | |
Lot to lot  | Spc<7% | |
Polymer removal  | Substrate Loss  | <5A | 
Particle  | <30ea (0.3u) | |

               
                                        
									   
